是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
风险等级: | 5.66 | 雪崩能效等级(Eas): | 18 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 700 V | 最大漏极电流 (ID): | 7 A |
最大漏源导通电阻: | 1.45 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 24 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP2762JB-A-HF | A-POWER |
获取价格 |
TRANSISTOR POWER, FET, FET General Purpose Power | |
AP2762R-A | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP2762R-A-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP2762S-A-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP2763I-A | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP2763I-A-HF | A-POWER |
获取价格 |
暂无描述 | |
AP2763W-A | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP2764AI | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP2764AI-A-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP2764AI-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |