5秒后页面跳转
AP2762I-H-HF PDF预览

AP2762I-H-HF

更新时间: 2024-11-18 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 57K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2762I-H-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.66雪崩能效等级(Eas):18 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:700 V最大漏极电流 (ID):7 A
最大漏源导通电阻:1.45 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):24 A
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP2762I-H-HF 数据手册

 浏览型号AP2762I-H-HF的Datasheet PDF文件第2页浏览型号AP2762I-H-HF的Datasheet PDF文件第3页浏览型号AP2762I-H-HF的Datasheet PDF文件第4页 
AP2762I-H-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
100% Avalanche Test  
BVDSS  
RDS(ON)  
ID  
700V  
1.45Ω  
7A  
Fast Switching Characteristics  
Simple Drive Requirement  
G
RoHS Compliant & Halogen-Free  
Description  
AP2762 series are specially designed as main switching devices for  
universal 90~265VAC off-line AC/DC converter applications. It provide high  
blocking voltage to overcome voltage surge and sag in the toughest power  
system with the best combination of fast switching design and cost-  
effectiveness.  
G
D
S
TO-220CFM(I)  
The TO-220CFM package is widely preferred for all commercial-industrial  
through hole applications. The mold compound provides a high isolation  
voltage capability and low thermal resistance between the tab and the  
external heat-sink.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
700  
Gate-Source Voltage  
+30  
V
ID@TC=25  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
7
A
IDM  
24  
A
PD@TC=25℃  
Total Power Dissipation  
Single Pulse Avalanche Energy2  
33  
18  
W
mJ  
A
EAS  
IAR  
Avalanche Current  
6
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
3.8  
65  
Rthj-a  
Data & specifications subject to change without notice  
1
201305282  

与AP2762I-H-HF相关器件

型号 品牌 获取价格 描述 数据表
AP2762JB-A-HF A-POWER

获取价格

TRANSISTOR POWER, FET, FET General Purpose Power
AP2762R-A A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2762R-A-HF A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2762S-A-HF A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2763I-A A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2763I-A-HF A-POWER

获取价格

暂无描述
AP2763W-A A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2764AI A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2764AI-A-HF A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2764AI-HF A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET