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AP26G40GEO-HF PDF预览

AP26G40GEO-HF

更新时间: 2024-11-18 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管光电二极管双极性晶体管
页数 文件大小 规格书
3页 61K
描述
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP26G40GEO-HF 技术参数

生命周期:Contact Manufacturer零件包装代码:TSSOP
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.73Is Samacsys:N
外壳连接:COLLECTOR集电极-发射极最大电压:400 V
配置:SINGLE WITH BUILT-IN DIODEJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:GENERAL PURPOSE
晶体管元件材料:SILICON标称断开时间 (toff):2470 ns
标称接通时间 (ton):2500 nsBase Number Matches:1

AP26G40GEO-HF 数据手册

 浏览型号AP26G40GEO-HF的Datasheet PDF文件第2页浏览型号AP26G40GEO-HF的Datasheet PDF文件第3页 
AP26G40GEO-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL INSULATED GATE  
BIPOLAR TRANSISTOR  
ICP=150A @VGE=3.0V  
VCE  
ICP  
400V  
150A  
C
Low Gate Drive  
C
C
C
Strobe Flash Applications  
RoHS Compliant & Halogen-Free  
C
E
G
E
E
TSSOP-8  
G
E
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
VCE  
VGEP  
ICP  
Collector-Emitter Voltage  
Peak Gate-Emitter Voltage  
400  
+ 6  
V
Pulsed Collector Current, VGE @ 3.0V  
Maximum Power Dissipation  
Storage Temperature Range  
Junction Temperature Range  
150  
A
PD@TA=25oC1  
1
W
-55 to 150  
-55 to 150  
oC  
oC  
TSTG  
TJ  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
Parameter  
Gate-Emitter Leakage Current  
Collector-Emitter Leakage Current  
Collector-Emitter Saturation Voltage  
Gate Threshold Voltage  
Total Gate Charge  
Test Conditions  
Min. Typ. Max. Units  
VGE=+ 6V, VCE=0V  
IGES  
-
-
+10  
uA  
uA  
V
VCE=400V, VGE=0V  
VGE=3V, ICP=150A (Pulsed)  
VCE=VGE, IC=250uA  
IC=40A  
ICES  
VCE(sat)  
VGE(th)  
Qg  
-
-
10  
-
4.5  
-
9
0.3  
1.2  
V
nC  
nC  
nC  
ns  
µs  
ns  
µs  
pF  
pF  
pF  
-
-
-
-
-
-
-
-
-
-
-
86  
5.4  
29  
900  
1.6  
170  
2.3  
138  
VCE=200V  
Qge  
Qgc  
td(on)  
tr  
Gate-Emitter Charge  
Gate-Collector Charge  
Turn-on Delay Time  
-
-
-
-
-
-
V
V
GE=4V  
CC=320V  
IC=150A  
RG=10Ω  
VGE=3V  
Rise Time  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
VGE=0V  
Cies  
Coes  
Cres  
Input Capacitance  
5170 8270  
VCE=30V  
f=1.0MHz  
Output Capacitance  
45  
27  
-
-
-
Reverse Transfer Capacitance  
1
RthJA  
Thermal Resistance Junction-Ambient  
125 oC/W  
Notes:  
1.Surface mounted on 1 in2 copper pad of FR4 board, t=10s.  
Data and specifications subject to change without notice  
1
200908141  

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