Datasheet > AP2622GY-HF_14

AP2622GY-HF_14

更新时间： 2024-11-21 00:29:43

品牌	Logo	应用领域
富鼎先进 - A-POWER		栅
页数	文件大小	规格书
4页	102K
描述
Low Gate Charge

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中文翻译

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数据手册

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AP2622GY-HF_14 数据手册

AP2622GY-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low Gate Charge

BV_DSS

R_DS(ON)

I_D

50V

1.8Ω

▼ Small Package Outline

▼ Surface Mount Package

▼ RoHS Compliant

520mA

Description

Advanced Power MOSFETs utilized advanced processing techniques to

achieve the lowest possible on-resistance, extremely efficient and cost-

effectiveness device.

The SOT-26 package is widely used for all commercial-industrial

applications.

SOT-26

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

+20

Gate-Source Voltage

Continuous Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

520

410

1.5

P_D@T_A=25℃

Total Power Dissipation

0.8

Linear Derating Factor

0.006

-55 to 150

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

℃

Thermal Data

Symbol

Parameter

Value

150

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201204063

12 3 4

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