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AP2614GY-HF PDF预览

AP2614GY-HF

更新时间: 2024-11-18 12:26:35
品牌 Logo 应用领域
富鼎先进 - A-POWER 栅极栅极驱动
页数 文件大小 规格书
4页 58K
描述
Capable of 2.5V Gate Drive, Lower On-resistance

AP2614GY-HF 数据手册

 浏览型号AP2614GY-HF的Datasheet PDF文件第2页浏览型号AP2614GY-HF的Datasheet PDF文件第3页浏览型号AP2614GY-HF的Datasheet PDF文件第4页 
AP2614GY-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
S
Capable of 2.5V Gate Drive  
BVDSS  
RDS(ON)  
ID  
20V  
25mΩ  
7.2A  
D
D
Lower On-resistance  
G
Surface Mount Package  
D
RoHS Compliant & Halogen-Free  
SOT-26  
D
D
S
Description  
AP2614 series are from Advanced Power innovated design and  
silicon process technology to achieve the lowest possible on-  
resistance and fast switching performance. It provides the designer  
with an extreme efficient device for use in a wide range of power  
applications.  
G
The SOT-26 package is widely used for all commercial-industrial  
applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
20  
+12  
Gate-Source Voltage  
V
Continuous Drain Current3, VGS @ 4.5V  
Continuous Drain Current3, VGS @ 4.5V  
Pulsed Drain Current1  
ID@TA=25℃  
ID@TA=70℃  
IDM  
7.2  
A
5.8  
A
30  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201209241  

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