AP2625Y

更新时间： 2024-09-15 04:06:23

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	75K
描述
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2625Y 数据手册

AP2625Y

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low Gate Charge

BV_DSS

R_DS(ON)

I_D

-30V

135mΩ

- 2.3A

▼ Low On-resistance

▼ Surface Mount Package

Description

Advanced Power MOSFETs utilized advanced processing techniques

to achieve the lowest possible on-resistance, extremely efficient and

cost-effectiveness device.

SOT-26

The SOT-26 package is universally used for all commercial-industrial

applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

-30

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±12

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-2.3

-2

-20

P_D@T_A=25℃

Total Power Dissipation

1.2

Linear Derating Factor

0.01

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

110

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

200611041

12 3 4

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