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AP2608AGK-HF PDF预览

AP2608AGK-HF

更新时间: 2024-09-15 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 96K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2608AGK-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantHTS代码:8541.29.00.75
风险等级:5.69外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (Abs) (ID):0.92 A最大漏源导通电阻:1.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G4
湿度敏感等级:3元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.8 W最大脉冲漏极电流 (IDM):3 A
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP2608AGK-HF 数据手册

 浏览型号AP2608AGK-HF的Datasheet PDF文件第2页浏览型号AP2608AGK-HF的Datasheet PDF文件第3页浏览型号AP2608AGK-HF的Datasheet PDF文件第4页 
AP2608AGK-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
150V  
1.5Ω  
0.92A  
Lower Gate Charge  
Fast Switching Characteristic  
G
Halogen Free & RoHS Compliant Product  
D
Description  
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
S
D
SOT-223  
G
The SOT-223 package is designed for suface mount application,  
larger heatsink than SO-8 and SOT package.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
150  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current3, VGS @ 10V  
Continuous Drain Current3, VGS @ 10V  
Pulsed Drain Current1  
ID@TA=25  
ID@TA=70℃  
IDM  
0.92  
A
0.74  
A
3
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2.8  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
45  
Units  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201108112  

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