Datasheet > AP2602Y

AP2602Y

更新时间： 2024-11-18 08:31:51

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	75K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2602Y 数据手册

AP2602Y

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Capable of 2.5V gate drive

BV_DSS

R_DS(ON)

I_D

20V

34mΩ

6.3A

▼ Lower on-resistance

▼ Surface mount package

SOT-26

Description

Advanced Power MOSFETs utilized advanced processing techniques

to achieve the lowest possible on-resistance, extremely efficient and

cost-effectiveness device.

The SOT-26 package is universally used for all commercial-industrial

applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±12

6.3

Continuous Drain Current³, V_GS@ 4.5V

Pulsed Drain Current^1,2

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.016

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

200129043

12 3 4

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