Datasheet > AP2605Y

AP2605Y

更新时间： 2024-11-17 21:55:39

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描述
P CHANNEL ENHANCEMENT MODE

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AP2605Y 数据手册

AP2605Y

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Fast Switching Characteristic

▼ Lower Gate Charge

BV_DSS

R_DS(ON)

I_D

-30V

80mΩ

- 4A

▼ Small Footprint & Low Profile Package

SOT-26

Description

Advanced Power MOSFETs utilized advanced processing techniques

to achieve the lowest possible on-resistance, extremely efficient and

cost-effectiveness device.

The SOT-26 package is universally used for all commercial-industrial

applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

-30

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-4

-3.3

-20

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.016

-55 to 150

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

200202041

12 3 4

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