Datasheet > AP2605GY0-HF

AP2605GY0-HF

更新时间： 2024-11-18 12:52:07

品牌	Logo	应用领域
富鼎先进 - A-POWER		栅极开关
页数	文件大小	规格书
4页	61K
描述
Fast Switching Characteristic, Lower Gate Charge

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数据手册

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AP2605GY0-HF 数据手册

AP2605GY0-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Fast Switching Characteristic

▼ Lower Gate Charge

BV_DSS

R_DS(ON)

I_D

-30V

80mΩ

-4A

▼ Small Footprint & Low Profile Package

▼ RoHS Compliant & Halogen-Free

Description

Advanced Power MOSFETs utilized advanced processing techniques

to achieve the lowest possible on-resistance, extremely efficient and

cost-effectiveness device.

SOT-26

The SOT-26 package is widely used for all commercial-industrial

applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

-30

Gate-Source Voltage

+ 20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-4

-3

-20

P_D@T_A=25℃

T_STG

Total Power Dissipation

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201111011

12 3 4

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