5秒后页面跳转
AP2605GY-HF PDF预览

AP2605GY-HF

更新时间: 2024-09-15 20:02:59
品牌 Logo 应用领域
富鼎先进 - A-POWER 开关脉冲光电二极管晶体管
页数 文件大小 规格书
5页 126K
描述
TRANSISTOR 4 A, 30 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-6, FET General Purpose Power

AP2605GY-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.68
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):4 A最大漏源导通电阻:0.08 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):20 A表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP2605GY-HF 数据手册

 浏览型号AP2605GY-HF的Datasheet PDF文件第2页浏览型号AP2605GY-HF的Datasheet PDF文件第3页浏览型号AP2605GY-HF的Datasheet PDF文件第4页浏览型号AP2605GY-HF的Datasheet PDF文件第5页 
AP2605GY-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Fast Switching Characteristic  
Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
-30V  
80mΩ  
- 4A  
S
D
D
Small Footprint & Low Profile Package  
RoHS Compliant  
G
D
SOT-26  
D
Description  
D
Advanced Power MOSFETs utilized advanced processing techniques  
to achieve the lowest possible on-resistance, extremely efficient and  
cost-effectiveness device.  
G
S
The SOT-26 package is widely used for commercial-industrial  
applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
-4  
A
-3.3  
A
-20  
A
PD@TA=25℃  
Total Power Dissipation  
2
W
Linear Derating Factor  
0.016  
-55 to 150  
-55 to 150  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
200807082  

与AP2605GY-HF相关器件

型号 品牌 获取价格 描述 数据表
AP2605Y ETC

获取价格

P CHANNEL ENHANCEMENT MODE
AP2606AGY-HF A-POWER

获取价格

Fast Switching Characteristic, Lower Gate Charge
AP2606GY A-POWER

获取价格

TRANSISTOR 7 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-6, F
AP2606GY-HF A-POWER

获取价格

Fast Switching Characteristic, Lower Gate Charge
AP2607AGY-HF A-POWER

获取价格

Simple Drive Requirement, Small Package Outline
AP2607GY-HF A-POWER

获取价格

Simple Drive Requirement, Small Package Outline
AP2608AGK-HF A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2608AGY-HF A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2608GY A-POWER

获取价格

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP2609GY-HF A-POWER

获取价格

Simple Drive Requirement, Small Package Outline