是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.68 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 4 A | 最大漏源导通电阻: | 0.08 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 1 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大脉冲漏极电流 (IDM): | 20 A | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AP2605Y | ETC |
获取价格 |
P CHANNEL ENHANCEMENT MODE | |
AP2606AGY-HF | A-POWER |
获取价格 |
Fast Switching Characteristic, Lower Gate Charge | |
AP2606GY | A-POWER |
获取价格 |
TRANSISTOR 7 A, 30 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-6, F | |
AP2606GY-HF | A-POWER |
获取价格 |
Fast Switching Characteristic, Lower Gate Charge | |
AP2607AGY-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Small Package Outline | |
AP2607GY-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Small Package Outline | |
AP2608AGK-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP2608AGY-HF | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP2608GY | A-POWER |
获取价格 |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
AP2609GY-HF | A-POWER |
获取价格 |
Simple Drive Requirement, Small Package Outline |