Datasheet > AP2603Y

AP2603Y

更新时间： 2024-11-05 22:39:11

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描述
P CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP2603Y 数据手册

AP2603Y

Advanced Power

Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

-20V

65mΩ

-5.0A

▼ Small Package Outline

▼ Surface Mount Device

SOT-26

Description

Advanced Power MOSFETs utilized advanced processing techniques

to achieve the lowest possible on-resistance, extremely efficient and

cost-effectiveness device.

The SOT-26 package is universally used for all commercial-industrial

applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

-20

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±12

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current^1,2

-5

-4

-20

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.016

-55 to 150

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

200129043

12 3 4

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