Datasheet > AP2604GY-HF

AP2604GY-HF

更新时间： 2024-11-18 12:52:07

品牌	Logo	应用领域
富鼎先进 - A-POWER		栅极开关
页数	文件大小	规格书
4页	106K
描述
Fast Switching Characteristic, Lower Gate Charge

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数据手册

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AP2604GY-HF 数据手册

AP2604GY-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Fast Switching Characteristic

▼ Lower Gate Charge

BV_DSS

R_DS(ON)

I_D

30V

45mΩ

5.5A

▼ Small Footprint & Low Profile Package

SOT-26

Description

Advanced Power MOSFETs utilized advanced processing techniques to

achieve the lowest possible on-resistance, extremely efficient and cost-

effectiveness device.

The S0T-26 package is widely used for all commercial-industrial

applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Continuous Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

5.5

4.4

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.016

-55 to 150

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201201062

12 3 4

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