Datasheet > AP2604Y

AP2604Y

更新时间： 2024-11-18 06:37:15

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	76K
描述
N-CHANNEL ENHANCEMENT MODE

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数据手册

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AP2604Y 数据手册

AP2604Y

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Fast Switching Characteristic

▼ Lower Gate Charge

BV_DSS

R_DS(ON)

I_D

30V

45mΩ

5.5A

▼ Small Footprint & Low Profile Package

SOT-26

Description

Advanced Power MOSFETs utilized advanced processing techniques

to achieve the lowest possible on-resistance, extremely efficient and

cost-effectiveness device.

The S0T-26 package is universally used for all commercial-industrial

applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±20

5.5

Continuous Drain Current³, V_GS@ 4.5V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

4.4

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.016

-55 to 150

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

200115041

12 3 4

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