Datasheet > AON6426

AON6426

更新时间： 2024-09-14 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	396K
描述
30V N-Channel MOSFET

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AON6426 数据手册

AON6426

30V N-Channel MOSFET

General Description

technology with a low resistance package to provide

switch and battery protection applications.

The AON6426 combines advanced trench MOSFET

extremely low R_DS(ON)

. This device is ideal for load

Features

V_DS(V) = 30V

I_D= 65A

(V_GS= 10V)

(V_GS= 4.5V)

R_DS(ON)< 5.5mΩ

R_DS(ON)< 7.5mΩ

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

130

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

Avalanche Current ^C

I_AR

Repetitive avalanche energy L=0.1mH ^C

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

P_DSM

°C

Power Dissipation ^A

1.2

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

2.6

1/6

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