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AON6448 PDF预览

AON6448

更新时间: 2024-09-15 12:51:23
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
7页 456K
描述
80V N-Channel MOSFET

AON6448 数据手册

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AON6448  
80V N-Channel MOSFET  
General Description  
The AON6448 is fabricated with SDMOS TM  
technology that combines excellent R  
trench  
DS(ON) with low gate  
switching behavior. This universal technology is we  
applications.  
charge.The result is outstanding efficiency with controlled  
ll  
suited for PWM, load switching and general purpose  
Features  
VDS  
80V  
65A  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS = 7V)  
< 9.6m  
< 12mΩ  
D
Top View  
1
8
2
3
7
6
G
4
5
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
80  
±25  
65  
V
V
VGS  
TC=25°C  
Continuous Drain  
Current G  
ID  
TC=100°C  
41  
A
Pulsed Drain Current C  
IDM  
138  
11  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Avalanche energy L=0.1mH C  
IDSM  
A
9.0  
IAS, IAR  
50  
A
EAS, EAR  
125  
83  
mJ  
TC=25°C  
PD  
W
Power Dissipation B  
TC=100°C  
33  
TA=25°C  
2.5  
PDSM  
W
°C  
Power Dissipation A  
1.6  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
14  
40  
1
Max  
17  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
10s  
RθJA  
Steady-State  
Steady-State  
50  
RθJC  
1.5  
www.freescale.net.cn  
1/7  

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