Datasheet > AON6486

AON6486

更新时间： 2024-09-15 12:51:23

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飞思卡尔 - FREESCALE		/
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6页	476K
描述
100V N-Channel MOSFET

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AON6486 数据手册

AON6486

100V N-Channel MOSFET

General Description

The AON6486 combines advanced trench MOSFET technology with a low resistance package to provide

extremely low R_DS(ON)

.This device is ideal for boost converters and synchronous rectifiers for consumer,

telecom, industrial power supplies and LED backlighting.

Features

V_DS

100V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

10A

< 140mΩ

< 152mΩ

_DS(ON)(at V_GS= 4.5V)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

100

±20

V_GS

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

T_A=25°C

T_A=70°C

2.5

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

I_AS, I_AR

E_AS, E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

12.5

2.3

T_A=25°C

P_DSM

°C

Power Dissipation ^A

1.5

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

3.4

1/6

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