SMD Type
MOSFET
Transistors
N-Channel MOSFET
AON6512 (KON6512)
DFN5x6-8(PDFNWB5x6-8L)
Ƶ Features
ƽ VDS (V) = 30 V
ƽ
IDMAX (at VGS = 10 V) = 150 A
ƽ RDS(ON) (at VGS = 10 V) < 1.7 mȍ
ƽ RDS(ON) (at VGS = 4.5 V) < 2.4 mȍ
ƽ Low Gate Charge
S
D
D
D
D
S
S
G
ƽ High Current Capability
Ƶ Absolute Maximum Ratings (T = 25ć unless otherwise noted)
A
Parameter
Symbol
Rating
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
GS
V
20
150
115
340
54
T
C
=25ć
Continuous Drain Current G
Pulsed Drain Current C
I
D
TC
=100ć
I
DM
A
T
A
A
=25ć
=25ć
Continuous Drain Current
IDSM
43
T
Avalanche Current C
Avalanche Energy L = 0.05 mH C
I
AS
AS
SPIKE
70
E
123
36
mJ
V
V
DS Spike
100ns
V
83
T
T
T
T
C
=25ć
Power Dissipation B
Power Dissipation A
P
D
33
C=100ć
W
7.4
A
A
=25ć
=70ć
P
DSM
4.7
Thermal Resistance.Junction- to-Ambient A
Thermal Resistance.Junction- to-Ambient A D
Thermal Resistance.Junction- to-Case
Junction Temperature
17
t İ 10s
R
thJA
thJC
ć/W
Steady-State
Steady-State
55
R
1.5
T
J
150
-55 to 150
ć
Storage Temperature Range
Notes:
T
stg
A. The value of RșJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25°C. The Power dissipation PDSM is based on RșJA and the maximum allowed junction temperature of 150°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation P is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in
D
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RșJA is the sum of the thermal impedance from junction to case RșJC and case to ambient.
G. The maximum current rating is package limited.
1
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