Datasheet > AON6512 (KON6512)

AON6512 (KON6512)

更新时间： 2024-10-15 18:09:47

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科信 - KEXIN		/
页数	文件大小	规格书
7页	259K
描述
N-Channel MOSFET

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数据手册

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AON6512 (KON6512) 数据手册

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SMD Type

MOSFET

Transistors

N-Channel MOSFET

AON6512 (KON6512)

DFN5x6-8(PDFNWB5x6-8L)

Ƶ Features

ƽ VDS (V) = 30 V

IDMAX (at VGS = 10 V) = 150 A

ƽ RDS(ON) (at VGS = 10 V) < 1.7 mȍ

ƽ RDS(ON) (at VGS = 4.5 V) < 2.4 mȍ

ƽ Low Gate Charge

ƽ High Current Capability

Ƶ Absolute Maximum Ratings (T = 25ć unless otherwise noted)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

150

115

340

=25ć

Continuous Drain Current ^G

Pulsed Drain Current ^C

=100ć

=25ć

Continuous Drain Current

IDSM

Avalanche Current ^C

Avalanche Energy L = 0.05 mH ^C

SPIKE

123

DS Spike

100ns

=25ć

Power Dissipation ^B

Power Dissipation ^A

C=100ć

7.4

=25ć

=70ć

DSM

4.7

Thermal Resistance.Junction- to-Ambient ^A

Thermal Resistance.Junction- to-Ambient ^{A D}

Thermal Resistance.Junction- to-Case

Junction Temperature

t İ 10s

thJA

thJC

ć/W

Steady-State

1.5

150

-55 to 150

Storage Temperature Range

Notes:

stg

A. The value of RșJA is measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air environment with

=25°C. The Power dissipation PDSM is based on RșJA and the maximum allowed junction temperature of 150°C. The value

in any given application depends on the user's specific board design.

B. The power dissipation P is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in

setting the upper dissipation limit for cases where additional heatsinking is used.

C. Single pulse width limited by junction temperature TJ(MAX)=150°C.

D. The RșJA is the sum of the thermal impedance from junction to case RșJC and case to ambient.

G. The maximum current rating is package limited.

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