Datasheet > AON6536

AON6536

更新时间： 2024-11-06 12:24:59

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	484K
描述
30V N-Channel MOSFET

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AON6536 数据手册

AON6536

30V N-Channel MOSFET

General Description

Product Summary

The AON6536 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for load switch

and battery protection applications.

V_DS

30V

I_D(at V_GS=10V)

55A

R_DS(ON)(at V_GS=10V)

< 7mΩ

< 10mΩ

R_DS(ON)(at V_GS=4.5V)

100% UIS Tested

100% Rg Tested

DFN5X6

Top View

Bottom View

PIN1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

135

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche Energy L=0.05mH ^C

I_DSM

17.5

I_AS

E_AS

T_C=25°C

Power Dissipation ^B

T_C=100°C

35.5

P_D

T_A=25°C

5.5

P_DSM

°C

Power Dissipation ^A

3.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Symbol

Typ

Max

Units

°C/W

≤ 10s

R_θJA

Steady-State

R_θJC

2.8

3.5

Rev0 : Aug 2012

www.aosmd.com

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