Datasheet > AON6512

AON6512

更新时间： 2024-11-06 12:24:23

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飞思卡尔 - FREESCALE		/
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6页	283K
描述
30V N-Channel AlphaMOS

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AON6512 数据手册

AON6512

30V N-Channel AlphaMOS

General Description

• Latest Trench Power AlphaMOS (αMOS LV) technology

• Very Low RDS(on) at 4.5V_GS

• Low Gate Charge

• High Current Capability

• RoHS and Halogen-Free Compliant

Features

V_DS

30V

I_D(at V_GS=10V)

150A

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

< 1.7mΩ

< 2.4mΩ

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

150

115

340

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.05mH ^C

I_DSM

I_AS

E_AS

123

V_DSSpike

100ns

V_SPIKE

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^B

7.4

P_DSM

°C

Power Dissipation ^A

4.7

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.1

1.5

1/6

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