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AON6552 PDF预览

AON6552

更新时间: 2024-11-20 12:51:39
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 307K
描述
30V N-Channel AlphaMOS

AON6552 数据手册

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AON6552  
30V N-Channel AlphaMOS  
General Description  
Product Summary  
VDS  
30V  
• Latest Trench Power AlphaMOS (αMOS LV) technology  
• Very Low RDS(on) at 4.5VGS  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS = 4.5V)  
30A  
• Low Gate Charge  
• High Current Capability  
• RoHS and Halogen-Free Compliant  
< 5m  
< 8.5mΩ  
Application  
• DC/DC Converters in Computing, Servers, and POL  
100% UIS Tested  
100% Rg Tested  
• Isolated DC/DC Converters in Telecom and Industrial  
D
DFN5X6  
Top View  
Top View  
Bottom View  
1
8
7
6
5
2
3
4
G
S
PIN1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
30  
±20  
30  
V
V
VGS  
TC=25°C  
Continuous Drain  
CurrentG  
ID  
TC=100°C  
23  
A
Pulsed Drain Current C  
IDM  
120  
23  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
IDSM  
A
18  
Avalanche Current C  
Avalanche energy L=0.05mH C  
IAS  
32  
A
mJ  
V
EAS  
26  
VDS Spike  
100ns  
VSPIKE  
36  
TC=25°C  
TC=100°C  
TA=25°C  
TA=70°C  
25  
PD  
W
Power Dissipation B  
10  
4.1  
PDSM  
W
Power Dissipation A  
2.6  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
24  
Max  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
30  
64  
5
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
Steady-State  
Steady-State  
53  
RθJC  
3.5  
Rev 0: Nov. 2012  
www.aosmd.com  
Page 1 of 6  

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