Datasheet > AON6716

AON6716

更新时间： 2024-09-16 12:52:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	285K
描述
30V N-Channel MOSFET

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技术参数
数据手册

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AON6716 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.57
Base Number Matches：	1

AON6716 数据手册

AON6716

30V N-Channel MOSFET

SRFET

General Description

Product Summary

SRFET^TMAON6716 uses advanced trench technology

with a monolithically integrated Schottky diode to provide

excellent R_DS(ON),and low gate charge. This device is

suitable for use as a low side FET in SMPS, load

switching and general purpose applications.

V_DS

30V

I_D(at V_GS=10V)

85A

_DS(ON)(at V_GS=10V)

< 2.8mΩ

< 4.2mΩ

R_DS(ON)(at V_GS= 4.5V)

100% UIS Tested

100% R_gTested

DFN5X6

Top View

Bottom View

Top View

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

PIN1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

310

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DSM

I_AR

E_AR

174

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.3

P_DSM

°C

Power Dissipation ^A

1.4

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

1.5

Rev 1: November 2010

www.aosmd.com

Page 1 of 7

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