Datasheet > AON6710L

AON6710L

更新时间： 2024-11-18 21:17:15

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	185K
描述
Transistor

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技术参数
数据手册

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AON6710L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.57
Base Number Matches：	1

AON6710L 数据手册

AON6710

N-Channel Enhancement Mode Field Effect Transistor

SRFET

General Description

Features

SRFET^TMThe AON6710/L uses advanced trench

technology with a monolithically integrated Schottky

diode to provide excellent RDS(ON) and low gate

charge.This device is suitable for use as a low side

FET in SMPS, load switchng and general purpose

applications. AON6710 and AON6710L are electrically

identical.

V_DS(V) = 30V

I_D= 20A (V_GS= 10V)

_DS(ON)< 4.7mΩ (V_GS= 10V)

_DS(ON)< 6.7mΩ (V_GS= 4.5V)

-RoHS Compliant

-AON6710L is Halogen Free

Top View

Fits SOIC8

footprint !

SRFET ^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

DFN5X6

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^BJ

±20

V_GS

T_C=25°C

T_C=100°C

I_D

I_DM

Pulsed Drain Current

Continuous Drain

Current ^H

100

T_A=25°C

T_A=70°C

I_DSM

I_AR

Avalanche Current ^C

Repetitive avalanche energy L=0.3mH ^C

E_AR

135

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

T_A=70°C

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^C

Symbol

Typ

14.2

Max

Units

°C/W

t ≤ 10s

2.0

R_θJA

Steady-State

R_θJC

1.2

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

中文翻译

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