Datasheet > AON6782

AON6782

更新时间： 2024-11-18 12:24:59

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	260K
描述
30V N-Channel MOSFET

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AON6782 数据手册

AON6782

30V N-Channel MOSFET

SRFET

General Description

Product Summary

SRFET^TMAON6782 uses advanced trench technology

with a monolithically integrated Schottky diode to provide

excellent R_DS(ON),and low gate charge. This device is

suitable for use as a low side FET in SMPS, load switching

and general purpose applications.

V_DS

30V

85A

I_D(at V_GS=10V)

< 2.4mΩ

< 2.9mΩ

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

100% UIS Tested

100% R_gTested

DFN5X6

Top View

Bottom View

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

PIN1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

±12

Gate-Source Voltage

Continuous Drain

Current ^G

T_C=25°C

T_C=100°C

Pulsed Drain Current ^C

260

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_AS, I_AR

E_AS, E_AR

162

T_C=25°C

P_D

Power Dissipation ^B

Power Dissipation ^A

T_C=100°C

T_A=25°C

T_A=70°C

2.5

P_DSM

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

1.1

1.5

Rev1 : Oct 2010

www.aosmd.com

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