Datasheet > AON6702L

AON6702L

更新时间： 2024-11-18 19:17:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	215K
描述
Transistor

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中文翻译

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技术参数
数据手册

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AON6702L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.58
Base Number Matches：	1

AON6702L 数据手册

AON6702L

30V N-Channel MOSFET

SRFET

General Description

Product Summary

SRFET^TMꢀAON6702Lꢀusesꢀadvancedꢀtrenchꢀtechnology

withꢀaꢀmonolithicallyꢀintegratedꢀSchottkyꢀdiodeꢀtoꢀprovide

excellentꢀR_DS(ON),andꢀlowꢀgateꢀcharge.ꢀꢀThisꢀdeviceꢀis

suitableꢀforꢀuseꢀasꢀaꢀlowꢀsideꢀFETꢀinꢀSMPS,ꢀload

switchingꢀandꢀgeneralꢀpurposeꢀapplications.

V_DS

30V

ꢀꢀꢀI_Dꢀꢀ(atꢀV_GS=10V)

ꢀꢀꢀR_DS(ON)ꢀ(atꢀV_GS=10V)

ꢀꢀꢀR_DS(ON)ꢀ(atꢀV_GSꢀ=ꢀ4.5V)

85A

<ꢀ2mΩ

<ꢀ3mΩ

100%ꢀUISꢀTested

100%ꢀꢀR_gꢀTested

Top View

SRFET^TM

SoftꢀRecovery MOSFET:

IntegratedꢀSchottkyꢀDiode

DFN5X6

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

DrainꢁSourceꢀVoltage

GateꢁSourceꢀVoltage

±20

V_GS

T_C=25°C

ContinuousꢀDrain

Currentꢀ^G

I_D

T_C=100°C

PulsedꢀDrainꢀCurrentꢀ^C

I_DM

260

T_A=25°C

T_A=70°C

ContinuousꢀDrain

Current

AvalancheꢀCurrentꢀ^C

RepetitiveꢀavalancheꢀenergyꢀL=0.1mHꢀ^C

I_DSM

I_AR

E_AR

259

T_C=25°C

P_D

PowerꢀDissipationꢀ^B

T_C=100°C

T_A=25°C

2.3

P_DSM

PowerꢀDissipationꢀ^A

1.4

T_A=70°C

JunctionꢀandꢀStorageꢀTemperatureꢀRange

T_J,ꢀT_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

MaximumꢀJunctionꢁtoꢁAmbientꢀ^A

tꢀꢀ≤ꢀ10s

R_θJA

MaximumꢀJunctionꢁtoꢁAmbientꢀ^AꢀD

MaximumꢀJunctionꢁtoꢁCase

SteadyꢁState

R_θJC

1.5

Rev 1: July 2009

www.aosmd.com

Page 1 of 7

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