Datasheet > AON6758

AON6758

更新时间： 2024-11-18 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	298K
描述
30V N-Channel AlphaMOS

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AON6758 数据手册

AON6758

30V N-Channel AlphaMOS

General Description

Product Summary

V_DS

30V

• Latest Trench Power AlphaMOS (αMOS LV) technology

• Integrated Schottky Diode (SRFET)

• Very Low RDS(on) at 4.5V_GS

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

32A

< 3.6mΩ

< 5mΩ

• Low Gate Charge

• High Current Capability

• RoHS and Halogen-Free Compliant

Application

• DC/DC Converters in Computing, Servers, and POL

100% UIS Tested

100% R_gTested

• Isolated DC/DC Converters in Telecom and Industrial

DFN5X6

Top View

Bottom View

SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

PIN1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

±20

V_GS

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

128

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

Avalanche Current ^C

Avalanche energy L=0.05mH ^C

I_AS

E_AS

V_DSSpike

100ns

V_SPIKE

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^B

4.1

P_DSM

°C

Power Dissipation ^A

2.6

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

2.6

Rev 1: April 2012

www.aosmd.com

Page 1 of 6

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