Datasheet > AON6712

AON6712

更新时间： 2024-11-18 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
5页	151K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AON6712 数据手册

AON6712

N-Channel Enhancement Mode Field Effect Transistor

SRFET

General Description

Features

The AON6712 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge.This device

is suitable for use as a high side switch in SMPS and

general purpose applications. Standard Product

AON6712 is Pb-free (meets ROHS & Sony 259

specifications).

V_DS(V) = 30V

I_D= 20A (V_GS= 10V)

_DS(ON)< 5.5mΩ (V_GS= 10V)

_DS(ON)< 6.5mΩ (V_GS= 4.5V)

Top View

Fits SOIC8

footprint !

SRFET ^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

DFN5X6

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current ^B,J

±12

V_GS

T_C=25°C

T_C=100°C

I_D

I_DM

Pulsed Drain Current

Continuous Drain

Current ^H

T_A=25°C

T_A=70°C

I_DSM

I_AR

Avalanche Current ^C

Repetitive avalanche energy L=0.3mH ^C

E_AR

264

62.5

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

T_A=70°C

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^C

Symbol

Typ

14.2

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

2.0

R_θJC

1.2

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5

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