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AON6590 PDF预览

AON6590

更新时间: 2024-09-16 19:47:35
品牌 Logo 应用领域
美国万代 - AOS 开关脉冲光电二极管晶体管
页数 文件大小 规格书
6页 221K
描述
Power Field-Effect Transistor,

AON6590 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F5Reach Compliance Code:compliant
风险等级:5.69雪崩能效等级(Eas):634 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (ID):100 A
最大漏源导通电阻:0.0015 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F5湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):400 A表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AON6590 数据手册

 浏览型号AON6590的Datasheet PDF文件第2页浏览型号AON6590的Datasheet PDF文件第3页浏览型号AON6590的Datasheet PDF文件第4页浏览型号AON6590的Datasheet PDF文件第5页浏览型号AON6590的Datasheet PDF文件第6页 
AON6590  
40V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
• Trench Power MV MOSFET technology  
• Low RDS(ON)  
40V  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS=4.5V)  
100A  
• Low Gate Charge  
• Optimized for fast-switching applications  
• RoHS and Halogen-Free Compliant  
< 0.99mΩ  
< 1.5mΩ  
Applications  
100% UIS Tested  
100% Rg Tested  
• Synchronous Rectification in DC/DC and AC/DC Converters  
• Isolated DC/DC Converters in Telecom and Industrial  
D
DFN5x6  
Top View  
Top View  
Bottom View  
1
2
3
4
8
7
6
5
G
PIN1  
S
PIN1  
Orderable Part Number  
Package Type  
Form  
Tape & Reel  
Minimum Order Quantity  
AON6590  
DFN 5x6  
3000  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
40  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
VGS  
±20  
100  
100  
400  
67  
TC=25°C  
Continuous Drain  
Current G  
Pulsed Drain Current C  
ID  
TC=100°C  
A
IDM  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
IDSM  
A
54  
Avalanche Current C  
Avalanche energy  
VDS Spike  
IAS  
65  
A
mJ  
V
C
L=0.3mH  
10µs  
EAS  
634  
48  
VSPIKE  
TC=25°C  
TC=100°C  
TA=25°C  
TA=70°C  
208  
83  
PD  
W
Power Dissipation B  
Power Dissipation A  
7.3  
PDSM  
W
4.7  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
14  
Max  
17  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
≤ 10s  
RθJA  
Steady-State  
Steady-State  
40  
50  
RθJC  
0.45  
0.6  
Rev.3.0: December 2014  
www.aosmd.com  
Page 1 of 6  

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