是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 1.73 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 30 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 24 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AON6558L | AOS |
获取价格 |
DFN 5X6 PACKAGE MARKING DESCRIPTION | |
AON6564 | AOS |
获取价格 |
30V N-Channel AlphaMOS | |
AON6566 | AOS |
获取价格 |
30V N-Channel AlphaMOS | |
AON6578 | AOS |
获取价格 |
DFN5X6 PACKAGE MARKING DESCRIPTION | |
AON6578L | AOS |
获取价格 |
DFN5X6 PACKAGE MARKING DESCRIPTION | |
AON6590 | AOS |
获取价格 |
Power Field-Effect Transistor, | |
AON6590A | AOS |
获取价格 |
Power Field-Effect Transistor, | |
AON6702 | AOS |
获取价格 |
Transistor | |
AON6702L | AOS |
获取价格 |
Transistor | |
AON6704 | AOS |
获取价格 |
Power Field-Effect Transistor, 85A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Me |