Datasheet > AON6590A

AON6590A

更新时间： 2024-11-20 19:53:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	598K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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AON6590A 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.7
Base Number Matches：	1

AON6590A 数据手册

AON6590A

40V N-Channel MOSFET

General Description

Product Summary

V_DS

• Trench Power MV MOSFET technology

• Low R_DS(ON)

40V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

100A

• Low Gate Charge

• Optimized for fast-switching applications

• RoHS and Halogen-Free Compliant

< 0.99mΩ

< 1.5mΩ

Applications

100% UIS Tested

100% Rg Tested

• Synchronous Rectification in DC/DC and AC/DC Converters

• Isolated DC/DC Converters in Telecom and Industrial

DFN5x6

Top View

Bottom View

PIN1

Orderable Part Number

Package Type

Form

Tape & Reel

Minimum Order Quantity

AON6590A

DFN 5x6

3000

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

100

400

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

Avalanche Current ^C

Avalanche energy

V_DSSpike

I_AS

L=0.3mH

10µs

E_AS

634

V_SPIKE

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

208

P_D

Power Dissipation ^B

7.3

P_DSM

Power Dissipation ^A

4.7

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

0.45

0.6

Rev.1.0: August 2019

www.aosmd.com

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