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AON6530 PDF预览

AON6530

更新时间: 2024-11-30 12:51:39
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
6页 294K
描述
30V N-Channel AlphaMOS

AON6530 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.57
Base Number Matches:1

AON6530 数据手册

 浏览型号AON6530的Datasheet PDF文件第2页浏览型号AON6530的Datasheet PDF文件第3页浏览型号AON6530的Datasheet PDF文件第4页浏览型号AON6530的Datasheet PDF文件第5页浏览型号AON6530的Datasheet PDF文件第6页 
AON6530  
30V N-Channel AlphaMOS  
General Description  
Product Summary  
VDS  
30V  
• Latest Trench Power AlphaMOS (αMOS LV) technology  
• Very Low RDS(on) at 4.5VGS  
• Low Gate Charge  
• High Current Capability  
• RoHS and Halogen-Free Compliant  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
72A  
< 4.5m  
< 7.8mΩ  
RDS(ON) (at VGS = 4.5V)  
Application  
• DC/DC Converters in Computing, Servers, and POL  
100% UIS Tested  
100% Rg Tested  
• Isolated DC/DC Converters in Telecom and Industrial  
D
DFN5X6  
Top View  
Top View  
Bottom View  
1
8
2
3
7
6
4
5
G
S
PIN1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
30  
V
Gate-Source Voltage  
VGS  
±20  
72  
V
A
TC=25°C  
Continuous Drain  
Current  
ID  
TC=100°C  
45  
Pulsed Drain Current C  
IDM  
178  
28.5  
23  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Avalanche energy L=0.05mH C  
IDSM  
A
IAS  
34  
A
mJ  
V
EAS  
29  
VDS Spike  
100ns  
VSPIKE  
36  
TC=25°C  
TC=100°C  
TA=25°C  
TA=70°C  
35.5  
14  
PD  
W
Power Dissipation B  
Power Dissipation A  
5.6  
PDSM  
W
3.6  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
18  
Max  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
10s  
22  
55  
RθJA  
Steady-State  
Steady-State  
40  
RθJC  
2.75  
3.5  
Rev0: Oct 2012  
www.aosmd.com  
Page 1 of 6  

AON6530 替代型号

型号 品牌 替代类型 描述 数据表
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