Datasheet > AON6452L

AON6452L

更新时间： 2024-11-05 21:10:15

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	278K
描述
Transistor

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技术参数
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AON6452L 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.56	Base Number Matches：	1

AON6452L 数据手册

AON6452L

N-Channel SDMOS ^TMPower Transistor

General Description

Product Summary

The AON6452L is fabricated with SDMOS^TMtrench

V_DS

100V

26A

I_D(at V_GS=10V)

technology that combines excellent R_DS(ON)with low gate

charge.The result is outstanding efficiency with controlled

switching behavior. This universal technology is well suited

for PWM, load switching and general purpose applications.

< 25mΩ

< 31mΩ

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 7V)

100% UIS Tested

100% R_gTested

Top View

Fits SOIC8

footprint !

DFN5X6

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

100

Units

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

Gate-Source Voltage

Continuous Drain

Current ^G

±25

T_C=25°C

T_C=100°C

Pulsed Drain Current ^C

T_A=25°C

T_A=70°C

6.5

Continuous Drain

Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

5.0

I_AR

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

P_DSM

Power Dissipation ^A

T_A=70°C

1.25

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

2.7

3.5

Rev0: February 2009

www.aosmd.com

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