Datasheet > AON6458

AON6458

更新时间： 2024-11-05 12:51:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	630K
描述
250V,14A N-Channel MOSFET

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AON6458 数据手册

AON6458

250V,14A N-Channel MOSFET

General Description

TheꢀAON6458ꢀisꢀfabricatedꢀusingꢀanꢀadvancedꢀhighꢀvoltage MOSFETꢀprocessꢀthatꢀisꢀdesignedꢀtoꢀdeliverꢀhighꢀlevelsꢀof

applications.ByꢀprovidingꢀlowꢀR^DS(on)

,ꢀC_iss

ꢀandꢀC

_rssꢀalongꢀwith

performanceꢀandꢀrobustnessꢀinꢀpopularꢀACꢁDC

quicklyꢀintoꢀnewꢀandꢀexistingꢀofflineꢀpowerꢀsupply

guaranteedꢀavalancheꢀcapabilityꢀthisꢀdeviceꢀcanꢀbeꢀadopted

synchronousꢀrectifiersꢀforꢀconsumer,ꢀtelecom,ꢀindustrial

designs.Thisꢀdeviceꢀisꢀidealꢀforꢀboostꢀconvertersꢀand

powerꢀsuppliesꢀandꢀLEDꢀbacklighting.

Features

ꢀꢀꢀV_DS

300V@150℃

14A

ꢀꢀꢀI_Dꢀꢀ(atꢀV_GS=10V)

ꢀꢀꢀR_DS(ON)ꢀ(atꢀV_GS=10V)

<ꢀ0.17Ω

Top View

Gꢀ

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

250

Units

DrainꢁSourceꢀVoltage

GateꢁSourceꢀVoltage

V_DS

V_GS

±30

T_C=25°C

ContinuousꢀDrain

Current^B

I_D

T_C=100°C

8.8

PulsedꢀDrainꢀCurrentꢀ^C

I_DM

2.2

1.7

4.5

304

T_A=25°C

T_A=70°C

ContinuousꢀDrain

Current

AvalancheꢀCurrentꢀ^C

Repetitiveꢀavalancheꢀenergyꢀ^C

Singleꢀpulsedꢀavalancheꢀenergyꢀ^H

Peakꢀdiodeꢀrecoveryꢀdv/dt

T_C=25°C

I_DSM

I_AR

E_AR

E_AS

dv/dt

608

V/ns

P_D

PowerꢀDissipationꢀ^B

T_C=100°C

°C

T_A=25°C

P_DSM

PowerꢀDissipationꢀ^A

1.25

T_A=70°C

JunctionꢀandꢀStorageꢀTemperatureꢀRange

T_J,ꢀT_STG

ꢁ50ꢀtoꢀ150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

MaximumꢀJunctionꢁtoꢁAmbientꢀ^A

MaximumꢀJunctionꢁtoꢁAmbientꢀ^AꢀD

MaximumꢀJunctionꢁtoꢁCase

tꢀꢀ≤ꢀ10s

R_θJA

SteadyꢁState

R_θJC

1.5

1/6

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