Datasheet > AON6484

AON6484

更新时间： 2024-11-05 12:51:23

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	346K
描述
100V N-Channel MOSFET

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AON6484 数据手册

AON6484

100V N-Channel MOSFET

General Description

technology with a low resistance package to provide

converters and synchronous rectifiers for consumer,

The AON6484 combines advanced trench MOSFET

extremely low R^DS(ON)

.This device is ideal for boost

telecom, industrial power supplies and LED backlighting.

Features

V_DS

100V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

12A

< 79mΩ

< 90mΩ

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

100

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_C=25°C

12.0

Continuous Drain

Current ^G

I_D

T_C=100°C

7.5

Pulsed Drain Current ^C

I_DM

3.3

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

2.7

I_AS, I_AR

E_AS, E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

25.0

10.0

P_D

T_A=25°C

P_DSM

°C

Power Dissipation ^A

1.3

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

3.5

1/6

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