Datasheet > AON6452

AON6452

更新时间： 2024-11-05 12:24:19

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
7页	454K
描述
100V N-Channel MOSFET

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AON6452 数据手册

AON6452

100V N-Channel MOSFET

General Description

The AON6452 is fabricated with SDMOS^TMtrenchtechnology that combines excellent R_DS(ON)

with low gate

charge.The result is outstanding efficiency with controlled

switching behavior. This universal technology is well

suited for PWM, load switching and general purpose

applications.

Features

V_DS

100V

I_D(at V_GS=10V)

26A

_DS(ON)(at V_GS=10V)

< 25mΩ

< 31mΩ

R_DS(ON)(at V_GS= 7V)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

100

±25

V_GS

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

6.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DSM

5.0

I_AR

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

P_DSM

Power Dissipation ^A

1.25

-55 to 150

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

2.7

3.5

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