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AON6454A PDF预览

AON6454A

更新时间: 2024-11-09 12:24:19
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
6页 503K
描述
150V N-Channel MOSFET

AON6454A 数据手册

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AON6454A  
150V N-Channel MOSFET  
General Description  
The AON6454A combines advanced trench MOSFET  
technology with a low resistance package to provide  
extremely low RDS(ON)  
.This device is ideal for boost converters and synchronous rectifiers for consumer,  
telecom, industrial power supplies and LED backligh  
ting.  
Features  
VDS  
150V  
31A  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
< 38m  
R
DS(ON) (at VGS=7V)  
< 44mΩ  
D
Top View  
1
2
3
4
8
7
6
5
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Maximum  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
150  
V
V
VGS  
±20  
TC=25°C  
31  
Continuous Drain  
Current  
Pulsed Drain Current C  
ID  
TC=100°C  
A
20  
IDM  
65  
TA=25°C  
TA=70°C  
5
Continuous Drain  
Current  
IDSM  
A
4.0  
Avalanche Current C  
IAS, IAR  
12  
A
Avalanche energy L=0.1mH C  
EAS, EAR  
7
83  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
PD  
W
33  
TA=25°C  
2.3  
PDSM  
W
°C  
Power Dissipation A  
1.5  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
14  
40  
1
Max  
17  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
RθJA  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
Steady-State  
Steady-State  
55  
RθJC  
1.5  
1/6  
www.freescale.net.cn  

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