Datasheet > AON6454

AON6454

更新时间： 2024-09-15 19:18:19

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	238K
描述
Transistor

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技术参数
数据手册

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AON6454 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.6
Base Number Matches：	1

AON6454 数据手册

AON6454

150V N-Channel MOSFET

General Description

Product Summary

V_DS

150V

The AON6454 combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for boost

converters and synchronous rectifiers for consumer,

telecom, industrial power supplies and LED backlighting.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 7V)

10A

< 40mΩ

< 45mΩ

100% UIS Tested

100% R_gTested

DFN5X6

Top View

Bottom View

PIN1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

150

V_GS

±25

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

Avalanche Current ^C

I_AS, I_AR

Avalanche energy L=0.1mH ^C

E_AS, E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.3

P_DSM

°C

Power Dissipation ^A

1.4

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.5

Rev 1: March 2011

www.aosmd.com

Page 1 of 6

12 3 4 5 6

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