Datasheet > AON6454A

AON6454A

更新时间： 2024-11-05 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	257K
描述
150V N-Channel MOSFET

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AON6454A

150V N-Channel MOSFET

General Description

Product Summary

V_DS

150V

The AON6454A combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON).This device is ideal for boost

converters and synchronous rectifiers for consumer,

telecom, industrial power supplies and LED backlighting.

I_D(at V_GS=10V)

31A

_DS(ON)(at V_GS=10V)

< 38mΩ

< 44mΩ

R_DS(ON)(at V_GS=7V)

100% UIS Tested

100% R_gTested

DFN5X6

Top View

Bottom View

PIN1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

150

V_GS

±20

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_DSM

4.0

Avalanche Current ^C

I_AS, I_AR

Avalanche energy L=0.1mH ^C

E_AS, E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.3

P_DSM

°C

Power Dissipation ^A

1.5

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

1.5

Rev 0: April 2011

www.aosmd.com

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