Datasheet > AON6450L

AON6450L

更新时间： 2024-11-05 08:31:03

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
7页	275K
描述
N-Channel SDMOS TM Power Transistor

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技术参数
数据手册

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AON6450L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.83
Base Number Matches：	1

AON6450L 数据手册

AON6450L

N-Channel SDMOS ^TMPower Transistor

General Description

Product Summary

The AON6450L is fabricated with SDMOS^TMtrench

Parameter

V_DS

100V

52A

technology that combines excellent R_DS(ON)with low gate

charge.The result is outstanding efficiency with controlled

switching behavior. This universal technology is well suited

for PWM, load switching and general purpose applications.

I_D(at V_GS=10V)

< 14.5mΩ

< 17.5mΩ

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 7V)

100% UIS Tested!

100% R _gTested!

- RoHS Compliant

- Halogen Free

Top View

Fits SOIC8

footprint !

DFN5X6

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

100

Units

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

Gate-Source Voltage

±25

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

T_C=100°C

110

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_AR

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

2.3

P_DSM

Power Dissipation ^A

T_A=70°C

1.4

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

1.5

Rev 0: January 2009

www.aosmd.com

Page 1 of 7

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