Datasheet > AON6448

AON6448

更新时间： 2024-11-09 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	279K
描述
80V N-Channel MOSFET

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技术参数
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AON6448 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.54
Base Number Matches：	1

AON6448 数据手册

AON6448

80V N-Channel MOSFET

SDMOS ^TM

General Description

Product Summary

The AON6448 is fabricated with SDMOS^TMtrench

technology that combines excellent R_DS(ON)with low gate

charge.The result is outstanding efficiency with controlled

switching behavior. This universal technology is well

suited for PWM, load switching and general purpose

applications.

V_DS

80V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 7V)

65A

< 9.6mΩ

< 12mΩ

100% UIS Tested

100% R_gTested

DFN5X6

Top View

Bottom View

PIN1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±25

V_GS

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

138

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_DSM

9.0

I_AS, I_AR

E_AS, E_AR

125

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

P_DSM

°C

Power Dissipation ^A

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.5

Rev 3: April 2011

www.aosmd.com

Page 1 of 7

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