5秒后页面跳转
AON6428 PDF预览

AON6428

更新时间: 2024-09-14 12:51:39
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
6页 306K
描述
30V N-Channel MOSFET

AON6428 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
零件包装代码:DFN包装说明:SMALL OUTLINE, R-PDSO-F5
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.7
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):43 A
最大漏极电流 (ID):43 A最大漏源导通电阻:0.0145 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F5
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):30 W最大脉冲漏极电流 (IDM):80 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AON6428 数据手册

 浏览型号AON6428的Datasheet PDF文件第2页浏览型号AON6428的Datasheet PDF文件第3页浏览型号AON6428的Datasheet PDF文件第4页浏览型号AON6428的Datasheet PDF文件第5页浏览型号AON6428的Datasheet PDF文件第6页 
AON6428  
30V N-Channel MOSFET  
General Description  
Product Summary  
VDS  
30V  
The AON6428 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge.This device is  
suitable for use as a high side switch in SMPS and  
general purpose applications.  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
43A  
< 10m  
< 14.5mΩ  
RDS(ON) (at VGS= 4.5V)  
100% UIS Tested  
100% Rg Tested  
D
DFN5X6  
Top View  
Top View  
Bottom View  
1
8
2
3
7
6
4
5
G
S
PIN1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
30  
V
V
Gate-Source Voltage  
VGS  
±20  
TC=25°C  
43  
Continuous Drain  
Current  
ID  
TC=100°C  
27  
A
A
Pulsed Drain Current C  
IDM  
80  
TA=25°C  
TA=70°C  
11  
Continuous Drain  
Current  
Avalanche Current C  
Repetitive avalanche energy L=0.05mH C  
IDSM  
8
IAR  
45  
A
EAR  
51  
mJ  
TC=25°C  
Power Dissipation B  
TC=100°C  
30  
PD  
W
12  
2
TA=25°C  
PDSM  
W
°C  
Power Dissipation A  
1.3  
TA=70°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
21  
Max  
25  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
t
10s  
RθJA  
Steady-State  
Steady-State  
50  
60  
RθJC  
3.5  
4.2  
Rev 6: Novl 2011  
www.aosmd.com  
Page 1 of 6  

AON6428 替代型号

型号 品牌 替代类型 描述 数据表
AOL1448 AOS

功能相似

N-Channel Enhancement Mode Field Effect Transistor

与AON6428相关器件

型号 品牌 获取价格 描述 数据表
AON6435 AOS

获取价格

30V P-Channel MOSFET
AON6435 FREESCALE

获取价格

30V P-Channel MOSFET
AON6440 AOS

获取价格

40V N-Channel MOSFET
AON6440 FREESCALE

获取价格

40V N-Channel MOSFET SDMOS
AON6440L AOS

获取价格

Transistor
AON6442 FREESCALE

获取价格

40V N-Channel MOSFET
AON6442 AOS

获取价格

40V N-Channel MOSFET
AON6444 AOS

获取价格

60V N-Channel MOSFET
AON6444 FREESCALE

获取价格

60V N-Channel MOSFET
AON6444L AOS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,