Datasheet > AON6426L

AON6426L

更新时间： 2024-09-14 06:37:15

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
6页	139K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AON6426L 数据手册

AON6426L

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AON6426L combines advanced trench MOSFET

technology with a low resistance package to provide

extremely low R_DS(ON). This device is ideal for load

switch and battery protection applications.

_DS(V) = 30V

I_D= 24A

(V_GS= 10V)

(V_GS= 4.5V)

R_DS(ON)< 5.5mΩ

R_DS(ON)< 7.5mΩ

- RoHS Compliant

- Halogen Free

100% UIS Tested!

100% R _gTested!

Top View

Fits SOIC8

footprint !

DFN5X6

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

V_DS

±20

V_GS

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

130

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DSM

I_AR

E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

P_DSM

°C

Power Dissipation ^A

1.2

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

2.6

R_θJC

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6

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