Datasheet > AON6442

AON6442

更新时间： 2024-09-15 12:51:15

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	332K
描述
40V N-Channel MOSFET

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AON6442 数据手册

AON6442

40V N-Channel MOSFET

General Description

uniquely optimized to provide the most efficient high

The AON6442 uses trench MOSFET technology that is

frequency switching performance.Power losses are

minimized due to an extremely low combination of R_DS(ON)

and C_rss.In addition,switching behavior is well controlled

with a "Schottky style" soft recovery body diode.

Product Summary

V_DS

40V

32A

I_D(at V_GS=10V)

< 4.8mΩ

< 7mΩ

_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

Top View

100% UIS Tested

100% R_gTested

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

Gate-Source Voltage

±20

T_C=25°C

Continuous Drain

Current

Pulsed Drain Current ^C

T_C=100°C

168

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_AS, I_AR

E_AS, E_AR

T_C=25°C

35.7

P_D

Power Dissipation ^B

Power Dissipation ^A

T_C=100°C

T_A=25°C

T_A=70°C

4.2

P_DSM

2.7

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

2.6

3.5

1/6

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