Datasheet > AO6400

AO6400

更新时间： 2024-11-19 17:15:47

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	340K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:6A;Vgs(th)(V):±20;漏源导通电阻:30mΩ@10V;漏源导通电阻:40mΩ@4.5V

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AO6400 数据手册

UMW

AO6400

N-Channel MOSFET

PRODUCT SUMMARY

● VDS (V) =30V

● ID = 6 A

● RDS(ON) ＜ 38mΩ (VGS =10V)

● RDS(ON) ＜ 50mΩ (VGS =4.5V)

FEATURES

●

Low On-Resistance

SOT23-6

APPLICATIONS

●

DC/DC Converters, High Speed Switching

ABSOLUTE MAXIMUM RATINGS

(T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

± 20

6^e

5.5^{b, c}

4.4^{b, c}

_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

Pulsed Drain Current (t = 300 µs)

I_DM

I_S

_C= 25 °C

2.1

1.1^{b, c}

Continuous Source-Drain Diode Current

_A= 25 °C

T_C= 25 °C

2.5

_C= 70 °C

P_D

1.6

Maximum Power Dissipation

1.3^{b, c}

0.8^{b, c}

T_A= 25 °C

T_A= 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Typical

Maximum

100

Unit

t  5 s

Steady State

R_thJA

R_thJF

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 166 °C/W.

e. Package limited.

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UTD Semiconductor Co.,Limited

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