Datasheet > AO6402L

AO6402L

更新时间： 2024-11-20 21:55:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	113K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AO6402L 数据手册

Rev 3:Nov 2004

AO6402, AO6402L ( Green Product )

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO6402 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. This

device may be used as a load switch or in PWM

applications. AO6402L ( Green Product ) is offered in

a lead-free package.

V_DS(V) = 30V

I_D= 6.9A

_DS(ON)< 28mΩ (V_GS= 10V)

_DS(ON)< 42mΩ (V_GS= 4.5V)

TSOP-6

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_A=25°C

T_A=70°C

6.9

Continuous Drain

Current ^A

Pulsed Drain Current ^B

I_D

5.8

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.44

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

110

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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