Datasheet > AO6404_12

AO6404_12

更新时间： 2024-10-30 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	219K
描述
20V N-Channel MOSFET

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AO6404_12 数据手册

AO6404

20V N-Channel MOSFET

General Description

Product Summary

The AO6404 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V V_GS(MAX)rating. It is ESD protected.

V_DS(V) = 20V

I_D= 8.6A (V_GS= 10V)

R_DS(ON)< 17mΩ (V_GS= 10V)

R_DS(ON)< 18mΩ (V_GS= 4.5V)

R_DS(ON)< 24mΩ (V_GS= 2.5V)

R_DS(ON)< 33mΩ (V_GS= 1.8V)

ESD Rating: 2000V HBM

TSOP6

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±12

8.6

T_A=25°C

T_A=70°C

Continuous Drain

Current ^A

I_D

6.8

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

P_D

°C

Power Dissipation ^A

1.28

-55 to 150

Junction and Storage Temperature Range

T_J, T_STG

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

110

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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