Datasheet > AO6405

AO6405

更新时间： 2024-09-12 22:05:43

品牌	Logo	应用领域
阿尔法 - ALPHA		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	233K
描述
P-Channel Enhancement Mode Field Effect Transistor

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AO6405 数据手册

Aug 2002

AO6405

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO6405 uses advanced trench technology to

provide excellent R_DS(ON)with low gate charge. This

device is suitable for use as a load switch or in PWM

applications.

V_DS(V) = -30V

I_D= -5 A

_DS(ON)< 52mΩ (V_GS= -10V)

_DS(ON)< 87mΩ (V_GS= -4.5V)

TSOP6

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-30

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±20

-5

-4.2

T_A=25°C

T_A=70°C

I_D

I_DM

Pulsed Drain Current ^B

-20

T_A=25°C

T_A=70°C

1.4

P_D

Power Dissipation ^A

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

47.5

Max

62.5

110

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

t ≤ 10s

Steady-State

R_θJA

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6

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