Datasheet > AO6415_11

AO6415_11

更新时间： 2024-10-30 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	316K
描述
20V P-Channel MOSFET

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AO6415_11 数据手册

AO6415

20V P-Channel MOSFET

General Description

Product Summary

V_DS

-20V

The AO6415 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as

a load switch or in PWM applications.

I_D(at V_GS=-10V)

R_DS(ON)(at V_GS= -10V)

R_DS(ON)(at V_GS= -4.5V)

R_DS(ON)(at V_GS= -2.5V)

-3.3A

< 82mΩ

< 100mΩ

< 140mΩ

Typical ESD protection

HBM Class 2

TSOP6

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

-20

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

T_A=25°C

T_A=70°C

-3.3

Continuous Drain

Current

I_D

-2.7

Pulsed Drain Current ^C

I_DM

P_D

-17

1.25

T_A=25°C

T_A=70°C

°C

Power Dissipation ^B

0.8

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

100

140

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

111

R_θJL

Rev 2: Jul 2011

www.aosmd.com

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