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AO6415 PDF预览

AO6415

更新时间: 2024-09-13 08:31:03
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
4页 110K
描述
P-Channel Enhancement Mode Field Effect Transistor

AO6415 技术参数

生命周期:Not Recommended包装说明:,
Reach Compliance Code:compliant风险等级:8.14
Base Number Matches:1

AO6415 数据手册

 浏览型号AO6415的Datasheet PDF文件第2页浏览型号AO6415的Datasheet PDF文件第3页浏览型号AO6415的Datasheet PDF文件第4页 
AO6415  
P-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO6415 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with gate  
voltages as low as 2.5V. This device is suitable for use as a  
load switch or in PWM applications. It is ESD protected.  
Standard Product AO6415 is Pb-free (meets ROHS & Sony  
259 specifications). AO6415L is a Green Product ordering  
option. AO6415 and AO6415L are electrically identical.  
VDS (V) = -20V  
ID = -3.3A (VGS = -10V)  
RDS(ON) < 75m(VGS = -10V)  
RDS(ON) < 100m(VGS = -4.5V)  
RDS(ON) < 150m(VGS = -2.5V)  
ESD Rating: 2000V HBM  
TSOP6  
Top View  
D
1
2
3
6
5
4
D
D
G
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
-20  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±12  
-3.3  
V
A
TA=25°C  
TA=70°C  
ID  
-2.7  
Pulsed Drain Current B  
IDM  
-14  
TA=25°C  
TA=70°C  
1.25  
PD  
W
Power Dissipation A  
0.8  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
82  
Max  
100  
140  
70  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
111  
56  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

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