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AO6409 PDF预览

AO6409

更新时间: 2024-10-30 12:51:31
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
5页 336K
描述
20V P-Channel MOSFET

AO6409 数据手册

 浏览型号AO6409的Datasheet PDF文件第2页浏览型号AO6409的Datasheet PDF文件第3页浏览型号AO6409的Datasheet PDF文件第4页浏览型号AO6409的Datasheet PDF文件第5页 
AO6409  
20V P-Channel MOSFET  
General Description  
Product Summary  
VDS  
-20V  
The AO6409 uses advanced trench technology to provide  
excellent RDS(ON), low gate charge and operation with gate  
voltages as low as 1.8V. This device is suitable for use as  
a load switch applications.  
ID (at VGS=-4.5V)  
RDS(ON) (at VGS= -4.5V)  
RDS(ON) (at VGS= -2.5V)  
RDS(ON) (at VGS= -1.8V)  
-5.5A  
< 41m  
< 53mΩ  
< 65mΩ  
ESD Protected  
TSOP6  
D
Top View  
Bottom View  
Top View  
D
D
D
D
1
2
6
5
G
G
S
3
4
S
Pin1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
Drain-Source Voltage  
VDS  
-20  
V
Gate-Source Voltage  
VGS  
±8  
-5.5  
V
A
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
ID  
-4.2  
Pulsed Drain Current C  
IDM  
PD  
-30  
TA=25°C  
TA=70°C  
2.1  
W
°C  
Power Dissipation B  
1.3  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
48  
Max  
60  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
10s  
RθJA  
Steady-State  
Steady-State  
75  
90  
RθJL  
37  
45  
Rev 5: Sep 2011  
www.aosmd.com  
Page 1 of 5  

AO6409 替代型号

型号 品牌 替代类型 描述 数据表
AO6409A AOS

类似代替

20V P-Channel MOSFET
SI3433CDV-T1-GE3 VISHAY

功能相似

P-Channel 20-V (D-S) MOSFET
NTGS3443T1G ONSEMI

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Power MOSFET 2 Amps, 20 Volts P−Channel TSOP−6

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