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AO6420 PDF预览

AO6420

更新时间: 2024-10-30 03:18:55
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 127K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO6420 数据手册

 浏览型号AO6420的Datasheet PDF文件第2页浏览型号AO6420的Datasheet PDF文件第3页浏览型号AO6420的Datasheet PDF文件第4页 
AO6420  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO6420 uses advanced trench technology to  
provide excellent RDS(ON) and low gate charge. This  
device is suitable for use as a load switch or in PWM  
applications. Standard Product AO6420 is Pb-free  
(meets ROHS & Sony 259 specifications).  
VDS (V) = 60V  
ID = 4.2A (VGS = 10V)  
R
DS(ON) < 60m(VGS = 10V)  
DS(ON) < 75m(VGS = 4.5V)  
R
Rg,Ciss,Coss,Crss Tested!  
TSOP-6  
Top View  
D
S
1
2
3
6
5
4
D
D
G
D
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
60  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A,F  
±20  
4.2  
V
A
TA=25°C  
TA=70°C  
ID  
3.4  
Pulsed Drain Current B  
IDM  
20  
TA=25°C  
TA=70°C  
2.00  
PD  
W
Power Dissipation  
1.28  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
48  
Max  
62.5  
110  
40  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
74  
RθJL  
35  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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